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| BFS 17W NPN Silicon RF Transistor * For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type BFS 17W Marking Ordering Code MCs Q62702-F1645 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 205 C TS 93 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single Transistor Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 70 0.1 - V A 0.05 10 100 20 20 150 V 0.4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current IEBO - VEB = 2.5 V, IC = 0 DC current gain hFE IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V Collector-emitter saturation voltage VCEsat IC = 10 mA, IB = 1 mA Semiconductor Group 2 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any single Transistor Transition frequency Values typ. max. Unit fT 1 1.3 1.4 2.5 0.6 0.26 1.45 - GHz IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance Ccb 0.8 1.5 pF VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance Cce - VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance Cibo - VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance Cobs - VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Noise figure F |S21e|2 12.7 3.5 5 dB IC = 2 mA, VCE = 5 V, f = 800 MHz ZS = 0 Transducer gain IC = 20 mA, VCE = 5 V, f = 500 MHz ZS = 50 Linear output voltage V01=V02 100 - mV IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Third order intercept point IP3 23 - dBm IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Semiconductor Group 3 Nov-28-1996 BFS 17W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS 10 2 Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Nov-28-1996 BFS 17W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.3 pF 1.1 3.0 GHz Ccb 1.0 0.9 0.8 0.7 fT 2.0 10V 5V 3V 2V 1.5 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 20 V 26 V CB 0.5 1V 0.7V 0.0 0 5 10 15 20 mA IC 30 1.0 Semiconductor Group 5 Nov-28-1996 |
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